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vishay semiconductors vlmk/y32.. document number 81819 rev. 1.0, 25-feb-08 www.vishay.com 1 power smd led plcc-4 description the vlmk/y32.. is an advanced development in terms of heat dissipation. the leadframe profile of this plcc-4 smd package is optimized to reduce the thermal resistance. this allows higher drive current and doubles the light output compared to vishay?s high intensity smd led in plcc-2 package. product group and package data ? product group: led ? package: smd plcc-4 ? product series: power ? angle of half intensity: 60 features ? available in 8 mm tape ? high brightness smd led ? luminous intensity and color categorized per packing unit ? luminous intensity ratio per packing unit i vmax /i vmin 1.6 ? esd-withstand voltage: up to 2 kv according to jesd22-a114-b ? suitable for all soldering methods according to cecc 00802 and j-std-020c ? preconditioning: a cc. to jedec level 2a ? qualified according to je dec moisture sensitivity level 2a ? automotive qualified: aec-q101 ? lead (pb)-free device ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec ? compatible with ir reflow solder processes according to cecc 00802 and j-std-020c applications ? interior and exterior lighting ? indicator and backlighting purposes for audio, video, lcds, switches, symbols, illuminated advertising etc. ? illumination purpose, alternative to incandescent lamps ? general use note: 1) t amb = 25 c, unless otherwise specified 2) driving the led in reverse direction is suitable for short term application 19210 e3 parts table part color, luminous intensity technology VLMK32abbb-gs08 amber, i v = (1400 to 2850) mcd alingap on si vlmy32abbb-gs08 ye l l o w, i v = (1400 to 2850) mcd alingap on si absolute maximum ratings 1) vlmk/y32.. parameter test condition symbol value unit reverse voltage 2) v r 5v forward current i f 70 ma power dissipation p tot 200 mw junction temperature t j 125 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c thermal resistance junction/ambient mounted on pc board fr4 r thja 290 k/w
www.vishay.com 2 document number 81819 rev. 1.0, 25-feb-08 vishay semiconductors vlmk/y32.. note: 1) t amb = 25 c, unless otherwise specified 2) in one packing unit i vmax /i vmin 1.6 3) forward voltages are tested at a current pulse duration of 1 ms and a tolerance of 0.1 v note: 1) t amb = 25 c, unless otherwise specified 2) in one packing unit i vmax /i vmin 1.6 3) forward voltages are tested at a current pulse duration of 1 ms and a tolerance of 0.1 v note: luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of 11 %. the above type numbers represent the order groups which include only a few brightness groups. only one group will be shipped on each reel (there will be no mixing of two groups on each reel). in order to ensure availability, si ngle brightness groups will not be orderable. in a similar manner for colors where wavelength groups are measured and binned, single wavelength groups will be shipped on any one reel. in order to ensure availability, single wavelength groups will not be orderable. note: wavelengths are tested at a current pulse duration of 25 ms and an accuracy of 1 nm. optical and electrical characteristics 1) VLMK32., amber parameter test condition part included symbol min. typ. max. unit luminous intensity 2) i f = 50 ma VLMK32abbb VLMK32ab i v 1400 1800 mcd VLMK32ba i v 1800 2240 mcd VLMK32bb i v 2240 2850 mcd dominant wavelength i f = 50 ma d 610 621 nm spectral bandwidth at 50 % i rel max i f = 50 ma ? 18 nm angle of half intensity i f = 50 ma ? 60 deg forward voltage 3) i f = 50 ma v f 1.85 3.03 v reverse current v r = 5 v i r 0.01 10 a optical and electrical characteristics 1) vlmy32.., yellow parameter test condition part included symbol min. typ. max. unit luminous intensity 2) i f = 50 ma vlmy32abbb vlmy32ab i v 1400 1800 mcd vlmy32ba i v 1800 2240 mcd vlmy32bb i v 2240 2850 mcd dominant wavelength i f = 50 ma d 585 588 594 nm spectral bandwidth at 50 % i rel max i f = 50 ma ? 18 nm angle of half intensity i f = 50 ma ? 60 deg forward voltage 3) i f = 50 ma v f 1.85 3.03 v reverse current v r = 5 v i r 0.01 10 a luminous intensity classification group light intensity (mcd) standard min. max. ab 1400 1800 ba 1800 2240 bb 2240 2850 color classification group yellow amber dom. wavelength (nm) min. max. min. max. x 585 588 y 588 591 z 591 594 w 610 615 x 615 621 crossing table vishay osram VLMK32abbb-gs08 lae6sf-aabb vlmy32abbb-gs08 lye6sf-aabb
document number 81819 rev. 1.0, 25-feb-08 www.vishay.com 3 vishay semiconductors vlmk/y32.. typical characteristics t amb = 25 c, unless otherwise specified figure 1. forward current vs. ambient temperature figure 2. rel. luminous intensity vs. angular displacement figure 3. relative luminous intensity vs. forward current 0 10 20 30 40 50 60 70 8 0 90 100 0255075100125 21013 i f - for w ard c u rrent (ma) t am b - am b ient temperat u re (c) 0.4 0.2 0 0.2 0.4 0.6 95 10319 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 i v rel - relati v e l u mino u s intensity 0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 2.0 10 20 30 40 50 60 70 8 090100 yello w 21014 i v rel - relati v e l u mino u s intensity i f - for w ard c u rrent (ma) figure 4. relative luminous intensity vs. forward current figure 5. change of forward voltage vs. forward current figure 6. change of forward voltage vs. forward current 0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 10 20 30 40 50 60 70 8 090100 am b er 21015 i v rel - relati v e l u mino u s intensity i f - for w ard c u rrent (ma) - 0.5 - 0.4 - 0.3 - 0.2 - 0.1 0 0.1 0.2 0.3 0.4 0.5 10 20 30 40 50 60 70 8 0 90 100 yello w 21016 v f - change of for w ard v oltage (m v ) i f - for w ard c u rrent (ma) am b er - 0.5 - 0.4 - 0.3 - 0.2 - 0.1 0 0.1 0.2 0.3 0.4 0.5 10 20 30 40 50 60 70 8 090100 21017 v f - change of for w ard v oltage (m v ) i f - for w ard c u rrent (ma)
www.vishay.com 4 document number 81819 rev. 1.0, 25-feb-08 vishay semiconductors vlmk/y32.. figure 7. relative lum. intensity vs. ambient temperature figure 8. relative lum. intensity vs. ambient temperature figure 9. change of forward voltage vs. ambient temperature 0 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 t am b - am b ient temperat u re (c) 2101 8 i v rel - relati v e l u mino u s intensity yello w 0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 - 50 - 25 0 25 50 75 100 125 t am b - am b ient temperat u re (c) 21019 i v rel - relati v e l u mino u s intensity am b er - 250 - 200 - 150 - 100 - 50 0 50 100 150 200 250 - 50 - 25 0 25 50 75 100 125 t am b - am b ient temperat u re (c) 21020 v f - change of for w ard v oltage (m v ) yello w figure 10. change of forward vo ltage vs. ambient temperature figure 11. change of dominant wavelength vs. ambient temperature figure 12. change of dominant wavelength vs. ambient temperature - 250 - 200 - 150 - 100 - 50 0 50 100 150 200 250 - 50 - 25 0 25 50 75 100 125 t am b - am b ient temperat u re (c) 21021 v f - change of for w ard v oltage (m v ) am b er - 10 - 8 - 6 - 4 - 2 0 2 4 6 8 10 - 50 - 25 0 25 50 75 100 125 t am b - am b ient temperat u re (c) 21022 ? d - change of dom. w a v elength (nm) yello w - 10 - 8 - 6 - 4 - 2 0 2 4 6 8 10 - 50 - 25 0 25 50 75 100 125 t am b - am b ient temperat u re (c) 21023 ? d - change of dom. w a v elength (nm) am b er
document number 81819 rev. 1.0, 25-feb-08 www.vishay.com 5 vishay semiconductors vlmk/y32.. reel dimensions in millimeters figure 13. relative intensity vs. wavelength 0 0.2 0.4 0.6 0. 8 1.0 1.2 500 525 550 575 600 625 650 675 700 - w a v elength (nm) 21024 i v rel - relati v e l u mino u s intensity yello w figure 14. relative intensity vs. wavelength 0 0.2 0.4 0.6 0. 8 1.0 1.2 500 525 550 575 600 625 650 675 700 - w a v elength (nm) 21025 i v rel - relati v e l u mino u s intensity am b er 209 8 3 gs0 8 = 2000 pcs
www.vishay.com 6 document number 81819 rev. 1.0, 25-feb-08 vishay semiconductors vlmk/y32.. taping dimensions in millimeters 21066
document number 81819 rev. 1.0, 25-feb-08 www.vishay.com 7 vishay semiconductors vlmk/y32.. package/soldering pads dimensions in millimeters 209 8 2
www.vishay.com 8 document number 81819 rev. 1.0, 25-feb-08 vishay semiconductors vlmk/y32.. soldering profile bar code product label example: a) type of component b) ptc = manufacturing plant c) sel - selection code (bin): e.g.: k2 = code for luminous intensity group 4 = code for color group d) batch/date code e) total quantity f) company code g) code for lead (pb)-free classification (e3) figure 15. vishay lead (pb)-fr ee reflow soldering profile (acc. to j-std-020b) figure 16. double wave soldering of opto devices (all packages) 0 50 100 150 200 250 300 0 50 100 150 200 250 300 time (s) temperat u re (c) 240 c 245 c max. 260 c max. 120 s max. 100 s 217 c max. 30 s max. ramp u p 3 c/s max. ramp do w n 6 c/s 19 88 5 ir reflo w soldering profile for lead (p b )-free soldering preconditioning acc. to jedec le v el 2a max. 2 cycles allo w ed 255 c 235 c to 260 c 2 k/s ca. 200 k/s ca. 2 k/s second w a v e first w a v e ca. 5 k/s 5 s f u ll line: typical dotted line: process limits time (s) temperat u re (c) lead temperat u re 300 250 200 150 100 50 0 0 100 150 200 250 94 8 626-1 tt w soldering (acc. to cecc00 8 02) 50 100 c to 130 c forced cooling 106 37 a f b c d e g 21026
document number 81819 rev. 1.0, 25-feb-08 www.vishay.com 9 vishay semiconductors vlmk/y32.. dry packing the reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transportation and storage. final packing the sealed reel is packed into a cardboard box. a secondary cardboard box is used for shipping purposes. recommended method of storage dry box storage is recommended as soon as the aluminum bag has been opened to prevent moisture absorption. the following conditions should be observed, if dry boxes are not available: ? storage temperature 10 c to 30 c ? storage humidity 60 % rh max. after more than 672 h under these conditions moisture content will be too high for reflow soldering. in case of moisture absorp tion, the devices will recover to the former condition by drying under the following condition: 192 h at 40 c + 5 c/- 0 c and < 5 % rh (dry air/nitrogen) or 96 h at 60 c + 5 c and < 5 % rh for all device containers or 24 h at 100 c + 5 c not suitable for reel or tubes. an eia jedec standard jesd22-a112 level 2a label is included on all dry bags. example of jesd22-a112 level 2a label esd precaution proper storage and handling procedures should be followed to prevent esd damage to the devices especially when they are removed from the antistatic shielding bag. electro-static sensitive devices warning labels are on the packaging. vishay semiconductors standard bar code labels the vishay semiconductors standard bar code labels are printed at final packing areas. the labels are on each packing unit and contain vishay semiconductors specific data. al u min u m b ag la b el reel 15973 l e v e l caution this bag contains moisture ? sensitive devices 1. shelf life in sealed bag 12 months at <40c and < 90% relative humidity (rh) 2. after this bag is opened devices that will be subjected to infrared reflow, vapor - phase reflow, or equivalent processing (peak package body temp. 260c) must be: a) mounted within 672 hours at factory condition of < 30c/60%rh or b) stored at <1 0% rh. 3. devices require baking before mounting if: a) humidity indicator card is >10% when read at 23c + 5c or b) 2a or 2b is not met. 4. if baking is required, devices may be baked for: 192 hours at 40c + 5c/ - 0c and <5%rh (dry air/nitrogen) or 96 hours at 605 o cand <5%rh for all device containers or 24 hours at 1005c not suitable for reels or tubes bag seal date: ______________________________ (if blank, see bar code label) note: level defined by eia jedec standard jesd22 - a113 2a 197 8 6
www.vishay.com 10 document number 81819 rev. 1.0, 25-feb-08 vishay semiconductors vlmk/y32.. ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employee s and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively. 2. class i and ii ozone depleting substances in the cle an air act amendments of 1990 by the environmental protection agency (epa) in the usa. 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.

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